Fabrication of a γ-In2Se3/Si heterostructure phototransistor for heart rate detection
| Autor: | Chunyan Wu, Lin-Bao Luo, Yu-Xue Zhou, Chao Xie, Kai-Jun Cao, Yue Zhang, Ming Wang |
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| Rok vydání: | 2021 |
| Předmět: |
Fabrication
Materials science business.industry Heterojunction 02 engineering and technology General Chemistry Specific detectivity 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Photodiode law.invention Responsivity Fall time law Rise time Materials Chemistry Optoelectronics 0210 nano-technology business Dark current |
| Zdroj: | Journal of Materials Chemistry C. |
| ISSN: | 2050-7534 2050-7526 |
| DOI: | 10.1039/d1tc01837j |
| Popis: | A γ-In2Se3/Si heterostructure phototransistor with a broadened photoresponse has been developed, presenting a responsivity, specific detectivity and response speed of 10.24 A W−1, 8.63 × 1012 Jones and 0.76/0.85 ms (rise time/fall time) at 450 nm, respectively. The high responsivity could be attributed to the depressed dark current of the γ-In2Se3 nanofilm and the high gain arising from the gating effect of the phototransistor. Further analysis reveals that the relatively high responsivity and fast response speed facilitate the application of the device in real-time and accurate health monitoring, such as heart rate detection. |
| Databáze: | OpenAIRE |
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