Evolution of Ga droplets into GaSb quantum rings
| Autor: | Kamonchanok Khoklang, Patchareewan Prongjit, Somsak Panyakeow, Somchai Ratanathammaphan, Maetee Kunrugsa |
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| Rok vydání: | 2014 |
| Předmět: |
Reflection high-energy electron diffraction
Fabrication Materials science business.industry Flux Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Epitaxy law.invention Physics::Fluid Dynamics Condensed Matter::Materials Science Crystallography Reflection (mathematics) Electron diffraction law Physics::Atomic and Molecular Clusters Optoelectronics Crystallization business Molecular beam epitaxy |
| Zdroj: | 2014 International Conference on Nanoscience and Nanotechnology. |
| DOI: | 10.1109/iconn.2014.6965255 |
| Popis: | We present the fabrication of GaSb quantum rings (QRs) on the GaAs (001) substrates by droplet epitaxy technique using solid-source molecular beam epitaxy (MBE). In droplet epitaxy process, Ga was deposited on GaAs surface to form liquid Ga droplets and then exposed to Sb flux for crystallization. The evolution of Ga droplets into GaSb QRs is discussed and tracked by means of reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). |
| Databáze: | OpenAIRE |
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