Performance Boosting of Peripheral Transistor for High Density 4Gb DRAM Technologies by SiGe Selective Epitaxial Growth Technique
| Autor: | Moon Gi Kang, Jin Bum Kim, Yun-Seung Shin, Sangjoo Lee, Woo-Seop Kim, Do-Sun Lee, Yong-Hoon Son, U. I. Chung, Sung-Wook Kang, June Moon, Hyung-Gon Kim, K. H. Lee, P.K. Kang, Eun-Cheol Lee, In-Sun Jung, J.W. Lee, Young-Rok Kim |
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| Rok vydání: | 2006 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Materials science Electrostatic discharge Boosting (machine learning) business.industry Transistor Hardware_PERFORMANCEANDRELIABILITY Epitaxy law.invention PMOS logic Silicon-germanium chemistry.chemical_compound chemistry law Hardware_INTEGRATEDCIRCUITS Optoelectronics business NMOS logic Dram Hardware_LOGICDESIGN |
| Zdroj: | 2006 International SiGe Technology and Device Meeting. |
| DOI: | 10.1109/istdm.2006.246571 |
| Popis: | The SiGe SD structure in peripheral PMOS area of DRAM was successfully integrated without any degradation of peripheral NMOS properties, which is the first approach to DRAM. The PMOS performance enhancement was found to be more than 40%. The authors suggest the SiGe SD structure as the key solution for the improvement of peripheral PMOS transistor properties in sub-50nm DRAM technology |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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