Analysis of dark currents and deep level traps in InP- and GaAs-based In0.83Ga0.17As photodetectors
| Autor: | Yonggang Zhang, Ben Du, Y.J. Ma, X.L. Ji, S. P. Xi, Y.H. Shi, W.Y. Ji, Gu Yongwei, X.Y. Chen, Aowen Li |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Deep level business.industry Photodetector 02 engineering and technology Deep-level trap 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Inorganic Chemistry 0103 physical sciences Thermal Materials Chemistry Optoelectronics Tunneling current 0210 nano-technology business Transient spectroscopy Dark current |
| Zdroj: | Journal of Crystal Growth. 477:82-85 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2017.02.041 |
| Popis: | InP- and GaAs-based metamorphic In 0.83 Ga 0.17 As photodetectors were grown and investigated. Compared to InP-based photodetector, the dark current of GaAs-based photodetector at room temperature increased 2–3 times but still comparable, whereas at 77 K the dark current increased 2–3 orders. The deep-level transient spectroscopy results reveal that a deep level trap state exists in the GaAs-based photodetector structure. The higher dark current in GaAs-based photodetector at low temperature was mainly ascribed to a deep level trap induced tunneling current. The deep trap centers can also induce non-radiative recombination with smaller thermal active energy in the GaAs-based photodetector structure. |
| Databáze: | OpenAIRE |
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