An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory
| Autor: | Wei Zhang, Ying Hu, Tian-Jian Chu, Min-Chen Chen, Jin-Cheng Zheng, Hui-Chun Huang, Hsin-Lu Chen, Simon M. Sze, Wan-Ching Su, Ya-Chi Hung, Tsung-Ming Tsai, Yu-Ting Su, Ting-Chang Chang, Kuan-Chang Chang |
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| Rok vydání: | 2015 |
| Předmět: |
Materials science
business.industry Electrical engineering Electronic synapse Conductance chemistry.chemical_element Electrolyte Electronic Optical and Magnetic Materials Resistive random-access memory Neuromorphic engineering chemistry Electrode Optoelectronics Electrical and Electronic Engineering business Tin Voltage |
| Zdroj: | IEEE Electron Device Letters. 36:772-774 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2015.2448756 |
| Popis: | The multilevel capability of solid electrolyte resistive random access memory (RRAM) with a Pt/GeSO/TiN structure was explored for potential use as a synapse device. By varying the cutoff voltage during the dc $I$ – $V$ cycles or the ac pulse programming voltage amplitudes, continuous multilevel conductance states were obtained. The reference Pt/GeO/TiN RRAM was fabricated to certify the multilevel capability and was due to the character of the GeS solid electrolyte. Finally, the property of gradual conductance states was exploited to demonstrate spike-timing-dependent plasticity learning, which suggests device’s potential for use as an electronic synapse device for neuromorphic systems. |
| Databáze: | OpenAIRE |
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