Mechanisms of Implantation Damage Formation in AlxGa1–xN Compounds
| Autor: | F. Brunner, M. Felizardo, D. Nd. Faye, Eduardo Alves, Elke Wendler, Sérgio Ricardo Magalhães, Katharina Lorenz, Markus Weyers |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Diffraction Argon Analytical chemistry chemistry.chemical_element Nanotechnology 02 engineering and technology Radiation 021001 nanoscience & nanotechnology Rutherford backscattering spectrometry 01 natural sciences Fluence Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion General Energy chemistry 0103 physical sciences Physical and Theoretical Chemistry 0210 nano-technology Saturation (magnetic) Radiation resistance |
| Zdroj: | The Journal of Physical Chemistry C. 120:7277-7283 |
| ISSN: | 1932-7455 1932-7447 |
| DOI: | 10.1021/acs.jpcc.6b00133 |
| Popis: | AlxGa1–xN alloys, covering the entire compositional range (0 ≤ x ≤ 1), were implanted at room temperature with 200 keV argon (Ar) ions to fluences ranging from 1 × 1013 to 2 × 1016 Ar/cm2. The damage formation mechanisms and radiation resistance of AlxGa1–xN alloys were investigated combining in situ Rutherford backscattering spectrometry/channeling (RBS/C) and ex situ X-ray diffraction (XRD) in order to assess the damage profiles and the elastic response of the material to radiation. For all compounds, damage buildup proceeds in four stages revealing a saturation of the defect level for high fluences without any sign of amorphization. Surprisingly, in this high fluence regime, RBS/C reveals higher defect levels in samples with high AlN concentrations in contrast to the common believe that AlN is more radiation resistant than GaN. A model is proposed ascribing this behavior to a lower defect recombination cross section at room temperature combined with the formation of stable extended defects. The process... |
| Databáze: | OpenAIRE |
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