Improvement in buried silicon nitride silicon-on-insulator structures by fluorine-ion implantation
| Autor: | G. S. Virdi, C. M. S. Rauthan, Biswarup Pathak, A. Karthigeyan |
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| Rok vydání: | 1998 |
| Předmět: |
Auger electron spectroscopy
Materials science Silicon Auger effect business.industry Electrical breakdown Analytical chemistry General Physics and Astronomy Silicon on insulator chemistry.chemical_element Overlayer chemistry.chemical_compound symbols.namesake Ion implantation chemistry Silicon nitride symbols Optoelectronics business |
| Zdroj: | Journal of Applied Physics. 83:3668-3677 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.366587 |
| Popis: | As an effort to improve buried Si3N4–Si interfaces in silicon-on-insulator (SOI) structures, fluorine was implanted either before or after the synthesis of buried silicon nitride layers by high dose nitrogen ion implantation. In these synthesized SOI structures, the thickness of Si overlayer and the buried silicon nitride layer was found to be 2400±25 and 1725±25 A, respectively. Auger electron spectroscopy depth profile analysis illustrates that the fluorine ion implantation in the SOI structures modifies the distribution of nitrogen that results in better stoichiometry of the buried silicon nitride layers and abrupt Si3N4–Si interfaces. Current–voltage and high frequency capacitance–voltage characteristics were measured, and electrical breakdown measurements were performed on metal-nitride-silicon (MNS) structures, fabricated after removing the Si overlayer in the SOI structures. In the fluorine-implanted SOI specimens, the buried Si3N4 layers show a higher breakdown field strength of 4.4–5.2 MV/cm as c... |
| Databáze: | OpenAIRE |
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