Group III-nitrides nanostructures

Autor: M. Pérez-Caro, M. Ramírez-López, J. S. Rojas-Ramírez, I. Martínez-Velis, Y. Casallas-Moreno, S. Gallardo-Hernández, B. J. Babu, S. Velumani, M. López-López, Agustín Conde-Gallardo, Eloy Ayón-Beato, Juan José Godina-Nava, Martín Hernández-Contreras, Liliana Velasco-Sevilla
Rok vydání: 2012
Předmět:
Zdroj: AIP Conference Proceedings.
ISSN: 0094-243X
DOI: 10.1063/1.3678628
Popis: We report on the growth and characterization of self-assembled InGaN columnar nanostructures grown by gas source molecular beam epitaxy (GSMBE) on Si(111) substrates. At a zero concentration of Ga, InN nanocolumns (NCs) were successfully grown. In the case of InGaN, the surface morphology is dependent on composition; however, in general, InGaN samples exhibit columnar features. At concentrations near 50%, the samples show phase separation; this result is explained in terms of solid phase immiscibility.
Databáze: OpenAIRE