Reduction of post exposure delay time and contamination sensitivity in chemically amplified resists: application for lithography using off-line environment
| Autor: | S. Tedesco, B. Scarfogliere, Laurent Pain, M. Ribeiro, J.P. Coulomb, M. Morin, Cécile Gourgon |
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| Rok vydání: | 2001 |
| Předmět: |
Image formation
Materials science business.industry Nanotechnology Contamination Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Resist Optoelectronics Wafer Sensitivity (control systems) Electrical and Electronic Engineering Diffusion (business) business Inert gas Lithography |
| Zdroj: | Microelectronic Engineering. :511-516 |
| ISSN: | 0167-9317 |
| Popis: | The chemically amplified concept is directly linked to the diffusion capabilities of the photo-generated acid. As a consequence of this principle, delay time effect during processing may affect lithographic performance. This paper discusses the post exposure delay time impact on final image formation. It presents a solution based on inert atmosphere storage for off-line lithographic processes with which sub-50-nm patterns can be resolved even if the wafer is stored for more than 24 h after exposure. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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