Application of the SEMSpec electron-beam inspection system to in-process defect detection on semiconductor wafers
| Autor: | Alan D. Brodie, W. D. Meisburger, Jau Jack Y, H. J. Dohse, T. R. Cass, D. Hendricks |
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| Rok vydání: | 1996 |
| Předmět: |
Materials science
Pixel business.industry Scanning electron microscope Condensed Matter Physics Atomic and Molecular Physics and Optics Secondary electrons Surfaces Coatings and Films Electronic Optical and Magnetic Materials Field electron emission Optics Semiconductor Cathode ray Wafer Electrical and Electronic Engineering business Beam (structure) |
| Zdroj: | Microelectronic Engineering. 30:567-570 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(95)00311-8 |
| Popis: | A scanning electron-beam wafer inspection system (SEMSpec) has been developed. This system uses a high current (30–50 nA) field emission source to produce a low energy (800 eV) inspection beam. High speed digital processing (108 pixels/sec) of the secondary electron images locates processing defects automatically, records their position and size, and provides a post-inspection review platform. It is estimated that the SEMSpec system is approximately 103 times faster than a conventional scanning electron microscope in capturing defect images. |
| Databáze: | OpenAIRE |
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