High performance deep red top-emitting VCSELs grown by MOVPE at high growth rates

Autor:	J.E. Epler, M. Moser, Karlheinz H. Gulden, H.P. Schweizer
Rok vydání:	1997
Předmět:	Materials science Fabrication business.industry Crystal growth Gaas alas Condensed Matter Physics Laser law.invention Semiconductor laser theory Inorganic Chemistry Optics law Materials Chemistry Wafer Metalorganic vapour phase epitaxy Growth rate business
Zdroj:	Journal of Crystal Growth. 170:404-407
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(96)00517-9
Popis:	Top-emitting Alas AlGaAs vertical cavity surface emitting lasers emitting at 765 nm with minimum threshold currents of 0.6 mA and threshold voltages of 1.9 V have been grown by MOVPE. In order to keep the growth time low, we investigated the possibility to grow these structures at growth rates of 5 μm/h. Special attention was paid to the homogeneity that can be achieved over a 2″ wafer under these growth conditions. Spatially resolved reflectivity measurements on GaAs AlAs distributed Bragg reflectors showed, that the growth rate varies less than 0.3% in the center of the wafer and decreases by 1% at the wafer edge.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f0b655c286d5eceaccad5ffd0918dec3 https://doi.org/10.1016/s0022-0248(96)00517-9 Zobrazit plný text záznamu Full Text from ScienceDirect