Investigation of Single-Event Transients in AlGaN/GaN MIS-Gate HEMTs Using a Focused X-Ray Beam
| Autor: | E. C. Dillingham, Andrew D. Koehler, Ani Khachatrian, Nicolas J.-H. Roche, S. D. LaLumondiere, J. P. Bonsall, Dale McMorrow, Dale Brewe, Travis J. Anderson, S. P. Buchner |
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| Rok vydání: | 2019 |
| Předmět: |
Nuclear and High Energy Physics
Materials science 010308 nuclear & particles physics business.industry Transistor Wide-bandgap semiconductor Biasing Gallium nitride High-electron-mobility transistor 01 natural sciences law.invention chemistry.chemical_compound Semiconductor Nuclear Energy and Engineering chemistry law Logic gate 0103 physical sciences Optoelectronics Rectangular potential barrier Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Nuclear Science. 66:368-375 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2018.2885824 |
| Popis: | Focused, pulsed X-rays are used to generate single-event transients (SETs) in metal–insulator–semiconductor (MIS)-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) in order to investigate the mechanisms responsible for SETs. Unlike Schottky-gate GaN HEMTs, where current flows between gate and drain when the device is biased “OFF,” for the MIS-gate HEMTs, current flows between the source and drain. The presence of the SiNx insulating layer under the gate effectively blocks electrons on the gate from moving into the semiconductor. Short-duration SETs at the gate are caused by the collection of holes injected by the X-rays. SETs collected at the source and drain have an initial short-duration component, followed by a long-duration tail that can last for hundreds of nanoseconds. The long tails are due to positive charges (holes) that are less mobile than the electrons and so take longer to exit the HEMT, and to holes that become trapped at defects in the material. The holes lower the potential barrier between the source and the region under the gate, allowing for the injection of electrons that flow from the source to the drain. The durations of the SET tails are determined by the lifetimes of the trapped holes that are found to vary with X-ray photon energy and electrical bias. |
| Databáze: | OpenAIRE |
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