Self-organized growth of quantum boxes
| Autor: | Jean-Michel Gérard, N. Lebouché, F. Houzay, L. Leprince, F. Barthe, J. M. Moison, J. Y. Marzin |
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| Rok vydání: | 1996 |
| Předmět: |
Photoluminescence
business.industry Chemistry General Physics and Astronomy Nanotechnology Surfaces and Interfaces General Chemistry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Surfaces Coatings and Films Condensed Matter::Materials Science Quantum dot Homogeneity (physics) Optoelectronics business Quantum Computer Science::Databases Molecular beam epitaxy |
| Zdroj: | Applied Surface Science. 92:526-531 |
| ISSN: | 0169-4332 |
| Popis: | Spontaneous patterning of strained deposits can be put to use for fabricating quantum dots. We evaluate this technique in the case of InAs GaAs . It is shown that the requirements for optoelectronic devices (dot size, homogeneity, optical yield, etc.) are nearly met but that further progresses will be needed before actual atomic-scale engineering can be realized. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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