| Autor: |
Rajeev Dhar Dwivedi, Qingda Zhao, A.D.D. Dwivedi, Raghvendra Dhar Dwivedi |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
International Journal of Advanced Applied Physics Research. :1-5 |
| ISSN: |
2408-977X |
| DOI: |
10.15379/2408-977x.2019.06.01.01 |
| Popis: |
In this paper we present TCAD simulation and compact modeling of OTFTs. Finite element method (FEM) based numerical simulations have been performed using density of state model and field dependent mobility model to simulate the electrical behavior of the OTFT devices. Further Universal Organic Thin Film Transistor (UOTFT) compact model has been applied for simulating the DC I-V characteristics of the device using device modeling software UTMOST-IV. TCAD simulated characteristics and compact model based simulated characteristics were compared and contrasted. Device model parameters were extracted using UOTFT model. Extracted model is applied in designing the OTFT based PMOS-like inverter and hybrid operational amplifier. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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