Effect of crucible–sample adhesion on grain germination

Autor:	Pierre Dusserre, J.P. Nabot, N. Eustathopoulos, N. Giacometti, T. Duffar, P. Boiton
Rok vydání:	1999
Předmět:	Materials science Nucleation chemistry.chemical_element Crucible Germanium Adhesion Condensed Matter Physics Inorganic Chemistry Contact angle Crystallography chemistry.chemical_compound chemistry Boron nitride Materials Chemistry Composite material Carbon Line (formation)
Zdroj:	Journal of Crystal Growth. :374-378
ISSN:	0022-0248
DOI:	10.1016/s0022-0248(98)01244-5
Popis:	Solid-liquid interface demarcations have been performed during the growth of GaSb and Ge samples by the vertical Bridgman method. The crucibles were made of boron nitride, silica or carbon based materials. Subsequent metallographies in a plane containing the sample axis show that the interface is distorted on a distance of about 100 μm close to the crucible wall. The angle of the interface line with the crucible, measured on the solid side, ranges between 25° for GaSb/BN to 120° for Ge/SiO 2 . These measures are compared to the experimental observation that parasitic grain nucleation has a high probability of occurrence when BN crucibles are used and a rather low one in the case of silica crucibles. These results are in qualitative agreement with the theory of nucleation on homogeneous or heterogeneous substrates.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f087acb765348824efa117ff80ddf452 https://doi.org/10.1016/s0022-0248(98)01244-5 Zobrazit plný text záznamu Full Text from ScienceDirect