Modeling of Temperature-Dependent MOSFET Aging
| Autor: | Fernando Avila Herrera, Takahiro Iizuka, Hirotaka Takatsuka, Hideyuki Kikuchihara, Mitiko Miura-Mattausch, Hans Jurgen Mattausch |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science 02 engineering and technology Mechanics Activation energy Function (mathematics) 021001 nanoscience & nanotechnology 01 natural sciences Temperature measurement Trap (computing) Stress (mechanics) Consistency (statistics) 0103 physical sciences MOSFET Poisson's equation 0210 nano-technology |
| Zdroj: | 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). |
| DOI: | 10.1109/sispad.2019.8870469 |
| Popis: | We have modeled MOSFET-device aging based on the trap-density increase, which is included in the Poisson equation to consider aging explicitly and physically correct. To preserve consistency, the Poisson equation is solved iteratively. Measured temperature dependence of aged I-V characteristics are well reproduced with implementation of this aging model into the industry-standard model HiSIM. The extracted physical device quantities with the developed model from measurements have been investigated to characterize the aging features. It is observed that the activation energy E a as a function of V gs is nearly identical for non-aged and aged devices. This concludes that the temperature dependence of aging originates mostly from the temperature-dependent electrostatic potential, resulting in negligible temperature dependency of extracted trap density N trap . To generalize the conclusion, 2D-device simulation is investigated for a double-gate (DG) MOSFET with increased stress-induced trap density. The same results as obtained from measurements are achieved, namely the activation energy is nearly identical for either non-aged or aged cases. This concludes that the temperature dependence of device aging can be accurately predicted using the temperature-dependent I-V characteristics of non-aged device. |
| Databáze: | OpenAIRE |
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