Impact of DoS changes on resistance drift and threshold switching in amorphous phase change materials
| Autor: | Rüdiger Schmidt, Daniel Krebs, Gunnar Bruns, Reinhard Carius, C. Schlockermann, Josef Klomfaβ, Jennifer Luckas, Martin Salinga, Matthias Wuttig |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Condensed matter physics Band gap Activation energy Photothermal therapy Condensed Matter Physics Thermal conduction Electronic Optical and Magnetic Materials Amorphous solid Materials Chemistry Ceramics and Composites Forensic engineering Density of states sense organs Thin film Spectroscopy |
| Zdroj: | Journal of Non-Crystalline Solids. 358:2412-2415 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/j.jnoncrysol.2011.12.112 |
| Popis: | Phase change materials are probably the most promising candidates to be used in the upcoming generation of memory technologies. One of the main challenges for applications is the resistance increase over time occurring in the amorphous state called resistance drift. We have studied the time and temperature dependence of resistance drift in thin films of GeTe and other phase change materials. A relationship for the time and temperature dependence of the activation energy for conduction is used to describe resistance drift. Photothermal Deflection Spectroscopy shows that the optical band gap is increasing, suggesting to be the reason for an increase of the activation energy. Furthermore, our results on various materials show that the magnitude of drift tends to be dependent on the activation energy for conduction. A similar trend is observed for the dependence of the threshold switching field on the optical band gap. |
| Databáze: | OpenAIRE |
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