| Autor: |
P. Kruszewski, Grzegorz Cywiński, Pawel Prystawko, I. Yahniuk, J. Przybytek, Grigory Simin, Sergey Rumyantsev, Przemyslaw Wisniewski, K. Nowakowski-Szkudlarek, Wojciech Knap, Bartosz Grzywacz, A. Khachapuridze, P. Sai, Bartłomiej Stonio |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
2018 22nd International Microwave and Radar Conference (MIKON). |
| Popis: |
We report on comparison studies between a novel transistor-like device and two dimensional Fin Field-effect transistor (2DEG FinFET) towards their applications in a THz resonant detector. Both device structures have been fabricated on the same wafer of GaN/AlGaN epistructure during one processing run. The proposed here the transistor-like structure has two side Schottky gates, which can be biased towards complete pinch-off the 2DEG channel in this device. The characteristic dimensions of all device structures are in the range of typical for the laser writer processing i.e. a few micrometers, however in the case of the transistor-like device we report on electronical tuned confinement, which works down to submicron range. At certain conditions, near to pinch-off region, it is possible to obtain one dimensional current flow. This feature is especially attractive for THz resonant detector approach, which will be discussed in details. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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