Room-Temperature Spin Transport in Cd3As2
| Autor: | Susanne Stemmer, Aubrey T. Hanbicki, Jeremy T. Robinson, Timo Schumann, Gregory M. Stephen, Adam L. Friedman, Manik Goyal |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Spintronics Condensed matter physics Transistor General Engineering Spin valve General Physics and Astronomy 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Elementary charge 01 natural sciences 0104 chemical sciences law.invention law Spin diffusion Spin Hall effect Condensed Matter::Strongly Correlated Electrons General Materials Science 0210 nano-technology Spin (physics) Leakage (electronics) |
| Zdroj: | ACS Nano. 15:5459-5466 |
| ISSN: | 1936-086X 1936-0851 |
| DOI: | 10.1021/acsnano.1c00154 |
| Popis: | As the need for ever greater transistor density increases, the commensurate decrease in device size approaches the atomic limit, leading to increased energy loss and leakage currents, reducing energy efficiencies. Alternative state variables, such as electronic spin rather than electronic charge, have the potential to enable more energy-efficient and higher performance devices. These spintronic devices require materials capable of efficiently harnessing the electron spin. Here we show robust spin transport in Cd3As2 films up to room temperature. We demonstrate a nonlocal spin valve switch from this material, as well as inverse spin Hall effect measurements yielding spin Hall angles as high as θSH = 1.5 and spin diffusion lengths of 10-40 μm. Long spin-coherence lengths with efficient charge-to-spin conversion rates and coherent spin transport up to room temperature, as we show here in Cd3As2, are enabling steps toward realizing actual spintronic devices. |
| Databáze: | OpenAIRE |
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