| Popis: |
Using the Shockley—Read trap model for semiconductors, complete recombination equations are derived which are valid up to high injection levels. These are non-linear equations and a graphical method for their numerical solution is described. This method of solution with the aid of the charge control theory of transistor operation is used to account for certain anomalous responses of transistors in a simple switching circuit. The anomalous effects considered are the ‘ wiggle effect ’ and the ‘ asymmetrical switching effect’, characterized, for example, by inherent differences in rise and fall times. |
