Polycrystalline Cu(In, Ga)Se2 Thin Films and PV Devices Sputtered From a Binary Target without Additional Selenization
| Autor: | Po-Tsun Liu, Meng-Chyi Wu, Ying-Pin Chang, Bao-Tang Jheng |
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| Rok vydání: | 2013 |
| Předmět: | |
| Zdroj: | ECS Transactions. 50:53-58 |
| ISSN: | 1938-6737 1938-5862 |
| Popis: | Polycrystalline Cu(In, Ga)Se2 (CIGS)-based solar cell has emerged as one of the most promising absorber materials for inexpensive, high-efficiency solar cell applications, because of its tunable bandgap (1.04~1.68 eV), high-absorption coefficient (α>10cm), high tolerance to defects and impurities, as well as the highest conversion efficiencies of approximately 20% efficiency in the laboratory [1]. Among the various CIGS thin films manufacturing processes include evaporation, selenization, sputtering and electrodeposition. Selenization of metal layers using H2Se gas or Sevapor from a solid source allows the CIGS-based solar cell with a sunlight to electricity to achieve a conversion efficiency of 16.2 % and 10.2 %, respectively. However, most of these two-stage metallic precursors have certain limitations, including the use of highly toxic H2Se, and poor adhesion to the interface between Mo and CIS due to large volume expansion stresses originating from the selenization process. Developing a non-selenization process is thereby important, especially when considering environmental protection and promoting film adhesion. This work develops a chalcopyrite CIGS thin film without an additional selenization process, by using magnetron co-sputtering from the targets of Cu–Ga and In–Se alloys. Capable of eliminating a complex postselenization process with various chemical precursors, the proposed CIGS film is simple, inexpensive and promising for use in large-area production technology for solar cell applications. Finally, the optimum film characteristics are investigated based on the structural, compositional, electrical, and optical properties of films. |
| Databáze: | OpenAIRE |
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