| Autor: |
Elena Cazzini, Massimo Liverani, Tiberio Lippa, I. Mica, Michele Carlini, Roberto Alfonsetti, Monica Ceresoli, Davide Codegoni, Antonio Domenico D'Angelo, G. Moccia, Giampaolo Polsinelli, Maria Luisa Polignano, Felice Russo, Pio Pianezza, G. Nardone, Antonio Patacchiola |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
Solid State Phenomena. :271-277 |
| ISSN: |
1662-9779 |
| DOI: |
10.4028/www.scientific.net/ssp.205-206.271 |
| Popis: |
In this paper, we test proximity gettering layers obtained by carbon or silicon implantation for their efficiency in molybdenum and tungsten gettering. DLTS was used to measure the impurity concentration in the solid solution and so to evaluate gettering efficiency. It was found that carbon implantation is effective in capturing these impurities, whereas silicon implantation is not. Extended defects seem not to play an important role in gettering these impurities. In addition, gettering was found to be most effective at high impurity concentration. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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