Threshold Voltage Increasing Induced by Poly Silicon Gate Counter Pre-Doping in NMOSFET

Autor:	Hokmin Ho, Huachun Guo, Allan Zhou, Shuaigong Chen, I. C. Chen, Z.-H. Gan, Jianhua Ju, K. Zheng, Jay Ning, Jinhua Liu, Guiming Wang, Jimmy Wu
Rok vydání:	2010
Předmět:	Materials science Silicon chemistry business.industry Doping Electronic engineering chemistry.chemical_element Optoelectronics business Threshold voltage
Zdroj:	ECS Transactions. 27:33-38
ISSN:	1938-6737 1938-5862
Popis:	PMOS poly Si gate blank pre-doping combined with NMOS poly Si counter pre-doping process scheme is demonstrated to keep the benefit of one photolithography saving while no device or product properties degradation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f0558c1fb7f5d84d89094d6dde252bd8 https://doi.org/10.1149/1.3360592 Zobrazit plný text záznamu