Titanium Nitride Hard Mask Removal with Selectivity to Tungsten in FEOL
| Autor: | Hsing Chen Wu, Sheng Hung Tu, Emanuel I. Cooper, Min Chieh Yang |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Metallurgy Analytical chemistry chemistry.chemical_element Tungsten Condensed Matter Physics Titanium nitride Atomic and Molecular Physics and Optics chemistry.chemical_compound Tantalum nitride chemistry Etching (microfabrication) Particle General Materials Science Silicon oxide Selectivity Tin |
| Zdroj: | Solid State Phenomena. 255:91-96 |
| ISSN: | 1662-9779 |
| DOI: | 10.4028/www.scientific.net/ssp.255.91 |
| Popis: | This paper describes etching of titanium nitride (TiN) highly selective to tungsten (W), where the TiN etch rate (E/R) was about 100 Å/min and W E/R was less than 1 Å/min at 60°C. The formulation concept was adapted from the Entegris TK-10 series, but it was modified to fit the criteria for front-end application. No damage to tantalum nitride (TaN) was required during the etching process but silicon oxide compatibility requirement was relaxed. By replacing W inhibitors with more suitable ones, W loss was well controlled, while the particle issue previously found in the scale up lots was also solved. |
| Databáze: | OpenAIRE |
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