| Autor: |
Kosuke Yamada, Wataru Momose, Jun Mizuno, Shuichi Shoji, Hiroyuki Kuwae |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
2019 International Conference on Electronics Packaging (ICEP). |
| DOI: |
10.23919/icep.2019.8733483 |
| Popis: |
A low temperature Cu-Cu bonding technique using an atomically thin-Pt intermediate layer deposited by atomic layer deposition (ALD) was recently reported. In this study, we investigated the characteristic of the Cu-Cu quasi-direct bonding using different metal intermediate layers. A thin-Pt or Au intermediate layer were deposited on the Cu surface by ALD in angstrom level. Both the thin-Pt and the Au intermediate layer successfully improved the Cu-Cu bonding strength compared with that without thin-metal intermediate layer. Although Au is widely used as a thick-intermediate layer in conventional Cu-Cu bonding methods, the Cu-Cu quasi-direct bonding with thin-Pt layer obtained three times lager bonding strength (9.52 MPa) than that with thin-Au layer (3.20 MPa). These results are essential for developing low temperature Cu-Cu bonding for highly integrated 3D IC chips. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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