High‐performance planar native‐oxide buried‐mesa index‐guided AlGaAs‐GaAs quantum well heterostructure lasers
| Autor: | S. C. Smith, Robert D. Burnham, F. A. Kish, Steven A Maranowski, Nick Holonyak, S. J. Caracci |
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| Rok vydání: | 1992 |
| Předmět: | |
| Zdroj: | Applied Physics Letters. 61:321-323 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.107924 |
| Popis: | High‐performance planar ‘‘buried‐mesa’’ index‐guided AlGaAs‐GaAs quantum well heterostructure (QWH) lasers have been fabricated by oxidation (H2O vapor+N2 carrier gas, 425–525 °C) of a significant thickness of the high composition AlxGa1−xAs upper confining layer (outside the active stripe). The oxide provides excellent current confinement for low‐threshold laser operation and a low refractive index (n∼1.6) for transverse optical confinement and index guiding. Laser diodes with ∼4 μm‐wide active regions exhibit 300 K continuous (cw) laser thresholds of 8 mA, with single longitudinal mode operation to 23 mW/facet, and maximum output powers of 45 mW/facet (uncoated). Devices fabricated on a lower confinement AlxGa1−xAs‐GaAs QWH crystal (x≲0.6 instead of x≳0.8) with ∼4 μm‐wide active stripes exhibit 300 K cw thresholds of 9 mA and total external differential quantum efficiencies of 66%. Peak output powers ≳80 mW/facet (uncoated) with linear L‐I characteristics over the entire operating range are observed. In... |
| Databáze: | OpenAIRE |
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