| Popis: |
AlGaN-based deep ultraviolet light-emitting diodes (DUV-LEDs) have attracted much attention due to the potential applications in water purification, sterilization, and phototherapy etc[1]. However, the emission efficiency is still much lower than GaN-based blue LEDs because of the poor buffer quality, light extraction efficiency and carrier injection efficiency. In this study, sputtering technology was adopted to form the AlN nucleation layer and high-quality AlN buffer layer was grown by MOCVD. The full width at half maximum (FWHM) of X-ray diffraction (002) and (102) are |
