TOF SIMS analyses of stray Ga during FIB milling

Autor:	Fred A. Stevie, Brian P. Gorman, Lucille A. Giannuzzi, Chuanzhen Zhou, Christopher Santeufemio
Rok vydání:	2013
Předmět:	Materials science Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Focused ion beam Surfaces Coatings and Films Ion Secondary ion mass spectrometry Time of flight Ion implantation chemistry Sputtering Irradiation Gallium
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 31:06F108
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.4825403
Popis:	A blind study using two different 30 keV state-of-the-art Ga+ focused ion beam (FIB) columns was performed to analyze the surface concentration of Ga as a function of distance from a FIB milled feature. Time of flight secondary ion mass spectrometry was used to measure Ga surface and near surface concentration by a series of depth profiles at a distance up to 6.5 mm from a 100 μm ×100 μm constant dose FIB milled square. In column “A,” >1 × 1012 atoms/cm2 of Ga was detected up to ∼5 mm from the FIB milled square. Column “B” showed considerably less Ga but still detected >1 × 1012 atoms/cm2 at ∼250 μm from the FIB milled square. The depth profiles show that the Ga concentration was similar to a depth of ∼1 nm from the surface for both columns, indicating that these implantation depths correspond to a particle energy
Databáze:	OpenAIRE
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