Investigation of titanium nitride gates for tantalum pentoxide and titanium dioxide dielectrics
| Autor: | M. Tiner, L. Prabhu, Chris Hobbs, Philip J. Tobin, J. Conner, S. Bagchi, L. B. La, David Gilmer, Rama I. Hegde, O. Adetutu |
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| Rok vydání: | 2000 |
| Předmět: |
Materials science
business.industry Metallurgy chemistry.chemical_element Surfaces and Interfaces Dielectric Condensed Matter Physics Titanium nitride Surfaces Coatings and Films law.invention chemistry.chemical_compound Capacitor chemistry law Electrode Titanium dioxide Tantalum pentoxide Optoelectronics Tin business Leakage (electronics) |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1158-1162 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.582317 |
| Popis: | The compatibility of metallic titanium nitride (TiN) as a gate electrode on TiO2 and Ta2O5 gate dielectrics is investigated by rapid thermal annealing (RTA). The electrical and physical properties are characterized using I–V measurements and transmission electron microscopy. TiN/TiO2 capacitors are electrically stable up to at least 800 °C for 90 s. However, the leakage density for TiN/Ta2O5 capacitors is increased by an 850 °C, 60 s RTA. Both TiN/TiO2 and TiN/Ta2O5 capacitors display a large increase in leakage density after a 1025 °C, 20 s RTA. |
| Databáze: | OpenAIRE |
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