| Autor: |
Johannes Ruthardt, David Hirning, Kanuj Sharma, Maximilian Nitzsche, Philipp Ziegler, Manuel Fischer, Jorg Roth-Stielow |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
2021 IEEE Energy Conversion Congress and Exposition (ECCE). |
| DOI: |
10.1109/ecce47101.2021.9595166 |
| Popis: |
This paper presents investigations on the suitability of using the gate-signal injection method for junction temperature measurement of SiC-MOSFETs. The method is based on the temperature sensitivity of the internal gate resistance. A high frequency signal is injected into the gate circuit while the MOSFET is operating. The response of the injected signal is a high frequency current, which depends on the temperature sensitive gate circuit’s impedance. This current causes a voltage drop across the external gate resistor. This voltage depends on the junction temperature and is evaluated. This method was successfully implemented on Si-IGBTs in the past. However, there are challenges to face in implementing this method on SiC-MOSFETs. This paper shows the challenges and proposes solutions to overcome them. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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