Crystallization of isolated amorphous zones in semiconductors
| Autor: | I. Jenčič, Ian M. Robertson, E. P. Hollar |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Silicon business.industry Analytical chemistry Physics::Optics Mineralogy chemistry.chemical_element Germanium Condensed Matter Physics law.invention Amorphous solid Semiconductor chemistry law Transmission electron microscopy Threshold displacement energy Irradiation Crystallization business |
| Zdroj: | Philosophical Magazine. 83:2557-2571 |
| ISSN: | 1478-6443 1478-6435 |
| DOI: | 10.1080/1478643031000119976 |
| Popis: | Thermal annealing, irradiation with electrons (25-300 keV), and irradiation with photons (hν = 2.33-3.88 eV) have been used to stimulate the crystallization of isolated amorphous zones in Si, Ge, GaAs, GaP and InP. Transmission electron microscopy and computer image analysis were used to determine the crystallization processes. For all materials, thermally stimulated crystallization occurred only at temperatures above 373 K. The electron-stimulated crystallization rate is sensitive to the electron energy. Initially, the rate decreases with increasing energy until it reaches a minimum at about one half the threshold displacement energy and then it increases. It is insensitive to the irradiation temperature between 90 and 300 K and to the crystal orientation. The effective diameter of the amorphous zone initially shrinks linearly with increasing electron dose. For the laser-induced crystallization experiments the crystallization rate in Si, but not in Ge, was sensitive to the temperature, with a faster rate... |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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