Properties of AZO/Al2O3 Stacked Thin Film Transistors Prepared at Room Temperature

Autor:	方志强 Fang Zhi-qiang, 李正操 Li Zheng-cao, 徐 苗 Xu Miao, 胡诗犇 Hu Shi-ben, 曾 勇 Zeng Yong, 刘贤哲 Liu Xian-zhe, 兰林锋 Lan Lin-feng, 郑泽科 Zheng Ze-ke, 陶瑞强 Tao Rui-qiang, 彭俊彪 Peng Jun-biao, 王 磊 Wang Lei, 陈建秋 Chen Jian-qiu, 姚日晖 Yao Ri-hui, 蔡 炜 Cai Wei, 宁洪龙 Ning Hong-long
Rok vydání:	2016
Předmět:	Radiation Materials science Thin-film transistor business.industry Optoelectronics Condensed Matter Physics business Electronic Optical and Magnetic Materials
Zdroj:	Chinese Journal of Luminescence. 37:1372-1377
ISSN:	1000-7032
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::effa6175712aab3429e06ab060ef532e https://doi.org/10.3788/fgxb20163711.1372 Zobrazit plný text záznamu