| Autor: |
T. Nandha Kumar, Chong Jian Yee, Firas Odai Hatem, Haider A. F. Almurib |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
2015 IEEE Student Conference on Research and Development (SCOReD). |
| DOI: |
10.1109/scored.2015.7449413 |
| Popis: |
Spin-transfer torque magnetic tunnel junction (STT-MTJ) broadens the operation of electronic devices by using the electron spin along with its charge. In this work, the static behavior of the STT-MTJ is investigated using a mathematical model and a SPICE subcircuit. The designed subcircuit follows the Brinkman physical model of MTJ conductance, the tunneling magnetoresistance (TMR) bias dependence model, and Slonczewski model of critical current switching. The obtained simulation results show that the current of STT-MTJ depends linearly on the bias when the device is at parallel state while the dependency becomes nonlinear when the device switches into anti-parallel state. These results are in agreement with Brinkman's model and reflect the correctness of the designed subcircuit. The obtained results help us to predict the behavior of the nonvolatile MTJ-based memories, particularly, the magnetic random access memory (MRAM). |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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