Characterization of Ultra-Thin Hafnium Oxide Films Grown on Silicon by Atomic Layer Deposition Using Tetrakis(ethylmethyl-amino) Hafnium and Water Precursors

Autor:	M.-T. Ho, Marek P. Boleslawski, Torgny Gustafsson, Yunzhi Wang, Lyudmila V. Goncharova, S. Rivillon-Amy, L. Wielunski, Naim Moumen, Yves J. Chabal
Rok vydání:	2007
Předmět:	inorganic chemicals Materials science Silicon Hydrogen General Chemical Engineering Inorganic chemistry chemistry.chemical_element General Chemistry Nitride Hafnium oxide Hafnium Characterization (materials science) Atomic layer deposition chemistry polycyclic compounds Materials Chemistry Chlorine
Zdroj:	Chemistry of Materials. 19:3127-3138
ISSN:	1520-5002 0897-4756
DOI:	10.1021/cm061761p
Popis:	The role and effectiveness of chemical pre-functionalization of silicon surfaces (with hydrogen, chlorine, and nitride) to minimize interfacial SiO2 formation during atomic layer deposition growth ...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::efe802e967ad530f0f6dafa329cb9f1d https://doi.org/10.1021/cm061761p Zobrazit plný text záznamu