Accumulation of stable optical centres in silica glasses under pulse beam irradiation

Autor:	D. V. Orlinski, T.A. Bazilevskaya, Yu.A. Tarabrin, V. T. Gritsyna, V. S. Voitsenya
Rok vydání:	1996
Předmět:	Nuclear and High Energy Physics Materials science Nuclear Energy and Engineering Absorption spectroscopy Attenuation coefficient Absorbed dose Analytical chemistry Electron beam processing General Materials Science Electron Irradiation Atmospheric temperature range Crystallographic defect
Zdroj:	Journal of Nuclear Materials. :1310-1317
ISSN:	0022-3115
DOI:	10.1016/s0022-3115(96)00187-0
Popis:	Stable optical centres production under 10 MeV electron irradiation were investigated in three types of commercial silica glasses with different concentrations of the OH-group in the range 10 −2 –10 −4 %. The dependencies of absorption coefficient at wavelength 215 nm (α 215 ) on absorbed dose show the saturation at doses ⩾ 2 MGy for glasses with high concentrations of the OH-group. At a fixed dose of 0.56 MGy measurements of α 215 dependencies at temperature 310 K on electron pulse repetition rate ( f ) gives a substantial increase of efficiency of defects production at high value of f , that indicates the existence of transition effects in the time interval (Δτ) between electron pulses with a life time in ms range. Measured dependencies α 215 = f (Δτ) at temperatures 520 and 620 K show the intensification of radiation annealing process, that leads to very low efficiency of stable defect production at high electron pulse repetition rate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::efc79b970d784303a3e63baed8d0c4b6 https://doi.org/10.1016/s0022-3115(96)00187-0 Zobrazit plný text záznamu Full Text from ScienceDirect