Microstructure, heat treatment, and oxidation study of porous silicon formed on moderately dopedp-type silicon

Autor:	Y. P. Huang, A. Z. Li, Z. J. He, Q. Cui, T. A. Tang, D. W. Zheng, R. Kwor, X. J. Zhang
Rok vydání:	1997
Předmět:	Materials science Silicon Anodizing Doping technology industry and agriculture Analytical chemistry Oxide General Physics and Astronomy chemistry.chemical_element equipment and supplies Porous silicon Microstructure chemistry.chemical_compound chemistry Chemical engineering Porosity Porous medium
Zdroj:	Journal of Applied Physics. 81:492-496
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.364107
Popis:	A porous Si (PS) layer with a spongy microstructure on top of a dendritic microstructure was fabricated on a moderately doped p-type Si wafer using a two-step anodization process. This illustrates that in addition to substrate doping, anodization current density also has an effect on the porous Si microstructure. A preoxidation heat treatment of the spongy-type porous Si was found to change the porous structure significantly, making it more difficult to fully oxidize the layer at low temperatures. However, dendritic porous Si can better withstand the heat treatment without suffering noticeable changes in structure. X-ray photoelectron spectroscopy, infrared spectroscopy, and electrical breakdown tests were used to analyze the oxidized porous Si samples. The oxidation process and the resultant oxide were found to depend on several factors, including the porosity, the microstructure itself (e.g., spongy or dendritic-type), and the heat treatment history prior to oxidation. With similar porosity, dendritic P...
Databáze:	OpenAIRE
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