Dependence of Voltage and Size on Write Error Rates in Spin-Transfer Torque Magnetic Random-Access Memory
| Autor: | Jeong-Heon Park, Janusz J. Nowak, Philip L. Trouilloud, Eugene J. O Sullivan, Raman Kothandaraman, R. P. Robertazzi, Young-Hyun Kim, Jonathan Z. Sun, J.W. Lee, Gen P. Lauer, Guohan Hu, Anthony J. Annunziata, Daniel C. Worledge |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Physics Magnetoresistive random-access memory Condensed matter physics Spin-transfer torque 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Magnetic anisotropy Tunnel magnetoresistance Nuclear magnetic resonance Stack (abstract data type) 0103 physical sciences 0210 nano-technology Energy (signal processing) Pulse-width modulation Voltage |
| Zdroj: | IEEE Magnetics Letters. 7:1-4 |
| ISSN: | 1949-3088 1949-307X |
| Popis: | The dependence of the write-error rate (WER) on the applied write voltage, write pulse width, and device size was examined in individual devices of a spin-transfer torque (STT) magnetic random-access memory (MRAM) 4 kbit chip. We present 10 ns switching data at the ${10^{ - 6}}$ error level for 655 devices, ranging in diameter from 50 nm to 11 nm, to make a statistically significant demonstration that a specific magnetic tunnel junction stack with perpendicular magnetic anisotropy is capable of delivering good write performance in junction diameters range from 50 to 11 nm. Furthermore, write-error-rate data on one 11 nm device down to an error rate of $7{\times}10^{ - 10}$ was demonstrated at 10 ns with a write current of $7.5\;\upmu{\rm A}$ , corresponding to a record low switching energy below 100 fJ. |
| Databáze: | OpenAIRE |
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