| Autor: |
Wei-Chiao Wang, Kuan-I Cheng, Sung-Mao Wu |
| Rok vydání: |
2017 |
| Předmět: |
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| Zdroj: |
2017 IEEE 19th Electronics Packaging Technology Conference (EPTC). |
| DOI: |
10.1109/eptc.2017.8277485 |
| Popis: |
Nowadays, copper pillar bump is usually used in power IC and driver IC which in the environment of high current density and high temperature. When the energy is higher than active energy, electromigration happened and change the structure of package. As the resistance of traces increase, it may cause extra energy. Eventually the IC may fail. The purpose of this paper is to observe the structural alterations cause by electromigration. And calculate the active energy of material. Finally, this paper's purpose is to estimate the MTTF (Mean Time to Failure) of copper pillar bump in different current density and temperatures. This paper will design a series of experiment to calculate the active energy of material and design a confirmatory experiment to prove the result in order to estimate the MTTF of samples. In this paper also observe the structural alterations of samples by failure analysis. The purpose is to see the Intermetallic Compound and Kirkendall Void to realize the reason of failure. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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