Reply to 'Comment on ‘Spin splitting in modulation-dopedAlxGa1−xN∕GaNheterostructures’ '

Autor:	P. C. Ho, Ikai Lo, J. H. Huang, Li-Wei Tu, Kuang-Yu Hsieh, Wen-Chung Tsai, Ting-Chang Chang, Said Elhamri, J. K. Tsai, H. L. Huang, W. C. Mitchel, W. J. Yao
Rok vydání:	2006
Předmět:	Physics education.field_of_study Condensed matter physics Oscillation Scattering Population Heterojunction Condensed Matter Physics Electronic Optical and Magnetic Materials Superposition principle Amplitude Modulation education Wurtzite crystal structure
Zdroj:	Physical Review B. 73
ISSN:	1550-235X 1098-0121
DOI:	10.1103/physrevb.73.037302
Popis:	Tang et al. commented on our paper1 that the beating Shubnikov–de Haas SdH oscillations we observed in AlxGa1−xN/GaN heterostructures might originate from magnetointersubband scattering MIS instead of zero-field spin splitting. To support their argument, they pointed out that i a second-subband population with SdH oscillation frequency 16.7 T might exist in sample 3, ii the theoretical calculation in wurtzite GaN was still not available, iii the phase difference between SdH and MIS oscillations was equal to , and iv the amplitude of the beating pattern induced by the MIS effect was determined by AMIS sin , where = EF−E2 / c. In order to examine the accurate phases for the individual SdH oscillations, we applied the nonlinear curve-fitting technique to the original data in Fig. 3 of Ref. 1. After the removal of the background noise signal nonoscillating signal , the oscillatory resistivity osc B was fitted to the superposition of two independent cosine functions,2
Databáze:	OpenAIRE
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