Isolation of silicon film grown on porous silicon layer
| Autor: | Tadatsugu Itoh, Hiroshi Takai |
|---|---|
| Rok vydání: | 1983 |
| Předmět: |
Materials science
Solid-state physics Silicon business.industry Nanocrystalline silicon chemistry.chemical_element Strained silicon Condensed Matter Physics Epitaxy Porous silicon Electronic Optical and Magnetic Materials chemistry Materials Chemistry Optoelectronics LOCOS Electrical and Electronic Engineering business Layer (electronics) |
| Zdroj: | Journal of Electronic Materials. 12:973-982 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02654968 |
| Popis: | We have investigated a new technology for dielectric isolation of a Si film grown epitaxially on a porous silicon layer. After oxidation of the porous silicon layer, a Si on Ohcidized Porous Silicon(SOPS) structure can be obtained. It is proposed that micropores pinch off quickly in the interfacial region between the porous silicon layer and the epitaxial film. A minimum yield calculated from Rutherford backscattering spectra of the epitaxial silicon film is 5.3%, and an electron Hall mobility of 600cm2/V.s is obtained in the film with a carrier concentration of 1 x 1017 /cm3. MOSFETs were fabricated on the SOPS structure. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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