| Autor: |
Yan-Rong Cao, Yi-Qiang Zhao, Yang Zhao, Jin Shao, Dongyan Zhao, Xiaohua Ma, Min Wang, Wen-Long He, Yuan Yidong, Wan Yong, Wang Yubo, Long-Tao Zhang, Zhen Fu, Fang Liu, Chen Ren, Yanning Chen, Zhou Zhimei, Ling Lv, Xue-Feng Zheng, Du Jian, Peng Yeling, Hong-Tao Zhang |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
Chinese Physics B. 30:077305 |
| ISSN: |
1674-1056 |
| DOI: |
10.1088/1674-1056/abe117 |
| Popis: |
The performance degradation of gate-recessed metal–oxide–semiconductor high electron mobility transistor (MOS-HEMT) is compared with that of conventional high electron mobility transistor (HEMT) under direct current (DC) stress, and the degradation mechanism is studied. Under the channel hot electron injection stress, the degradation of gate-recessed MOS-HEMT is more serious than that of conventional HEMT devices due to the combined effect of traps in the barrier layer, and that under the gate dielectric of the device. The threshold voltage of conventional HEMT shows a reduction under the gate electron injection stress, which is caused by the barrier layer traps trapping the injected electrons and releasing them into the channel. However, because of defects under gate dielectrics which can trap the electrons injected from gate and deplete part of the channel, the threshold voltage of gate-recessed MOS-HEMT first increases and then decreases as the conventional HEMT. The saturation phenomenon of threshold voltage degradation under high field stress verifies the existence of threshold voltage reduction effect caused by gate electron injection. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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