Autor: |
W.K. Henson, J.J. Wortman, N. Yang |
Rok vydání: |
2003 |
Předmět: |
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Zdroj: |
International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318). |
Popis: |
This work examines different components of direct tunneling currents and analyzes the oxide reliability in scaled NMOSFETs with ultrathin gate oxides (1.4-2 nm). It concludes that the source/drain extension to the gate overlap regions have strong effects on the device performance in terms of both gate tunneling currents and oxide reliability. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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