Analysis of tunneling currents and reliability of NMOSFETs with sub-2 nm gate oxides

Autor:	W.K. Henson, J.J. Wortman, N. Yang
Rok vydání:	2003
Předmět:	chemistry.chemical_compound Reliability (semiconductor) Materials science chemistry business.industry Gate oxide MOSFET Electrical engineering Oxide Optoelectronics Time-dependent gate oxide breakdown business Quantum tunnelling
Zdroj:	International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
Popis:	This work examines different components of direct tunneling currents and analyzes the oxide reliability in scaled NMOSFETs with ultrathin gate oxides (1.4-2 nm). It concludes that the source/drain extension to the gate overlap regions have strong effects on the device performance in terms of both gate tunneling currents and oxide reliability.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ef733447471f27aee933961cb1e3b4d9 https://doi.org/10.1109/iedm.1999.824191 Zobrazit plný text záznamu