A New Backscattering Model Giving a Description of the Quasi-Ballistic Transport in Nano-MOSFET
| Autor: | Sylvain Barraud, G. Le Carval, F. Salvetti, D. Villanueva, Herve Jaouen, Thomas Skotnicki, E. Fuchs, Philippe Dollfus |
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| Rok vydání: | 2005 |
| Předmět: |
Physics
Computer simulation Nanoelectronics Ballistic conduction MOSFET Monte Carlo method Scattering theory Statistical physics Electrical and Electronic Engineering Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Electronic Optical and Magnetic Materials Communication channel Physical quantity |
| Zdroj: | IEEE Transactions on Electron Devices. 52:2280-2289 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/ted.2005.856181 |
| Popis: | A backscattering model suitable for compact modeling of nanoscale MOSFET is developed within the Landauer flux-scattering theory. To describe the quasi-ballistic transport, a new backscattering model based on the accurate determination of ballistic and backscattering probabilities along the channel is developed. This model is based on a careful analysis of transport in device using Monte Carlo simulation. This model allows us to display the main physical quantities along the channel and to accurately describe the quasi-ballistic transport and its effects on current-voltage characteristics. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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