Hydrogenated Amorphous Silicon Thin-Film Transistor on Plastic With an Organic Gate Insulator
| Autor: | Chang Bin Lee, Ji Ho Hur, Sung Hwan Won, Jang Kyun Chung, Jin Jang, Hyun Chul Nam |
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| Rok vydání: | 2004 |
| Předmět: |
Amorphous silicon
Electron mobility Materials science business.industry Gate dielectric Electronic Optical and Magnetic Materials Threshold voltage chemistry.chemical_compound chemistry Gate oxide Thin-film transistor Electronic engineering Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Leakage (electronics) |
| Zdroj: | IEEE Electron Device Letters. 25:132-134 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/led.2003.817368 |
| Popis: | We developed a high-performance, hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) on plastic substrate using an organic gate insulator. The TFT with a silicon-nitride (SiN/sub x/) gate insulator exhibited a field-effect mobility of 0.3 cm/sup 2//Vs and a threshold voltage of 5 V. On the other hand, an a-Si:H TFT with an organic gate insulator of BCB (benzocyclobutene) has a field-effect mobility of 0.4 cm/sup 2//Vs and a threshold voltage of 0.7 V. The leakage currents through the gate insulator of an a-Si:H TFT with an organic gate insulator is about two orders of magnitude lower than that of an a-Si:H TFT with a SiN/sub x/ gate insulator. |
| Databáze: | OpenAIRE |
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