Defect Formation of Nickel-Incorporated Large-Diameter Czochralski-Grown Silicon and Their Effect on Gate Oxide Reliability
| Autor: | Sung-Wook Lee, Ji-Seong Im, Hee-Bog Kang, Anselmo Jaehyeong Lee |
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| Rok vydání: | 2015 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry chemistry.chemical_element Time-dependent gate oxide breakdown 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials Nickel Reliability (semiconductor) chemistry Gate oxide 0103 physical sciences Optoelectronics 0210 nano-technology business Large diameter |
| Zdroj: | ECS Journal of Solid State Science and Technology. 5:P3008-P3012 |
| ISSN: | 2162-8777 2162-8769 |
| DOI: | 10.1149/2.0021604jss |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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