| Autor: |
Ihab El-Kady, Drew F. Goettler, Zayd C. Leseman, D. Bruce Burckel, Mehmet F. Su, Roy H. Olsson |
| Rok vydání: |
2010 |
| Předmět: |
|
| Zdroj: |
Volume 10: Micro and Nano Systems. |
| DOI: |
10.1115/imece2010-38956 |
| Popis: |
In this paper we present both experimental and theoretical results showing the effective use of material shaping to fabricate ultra-high-aspect-ratio (UHAR) vias with a focused ion beam (FIB). With this technique, one can create vias with aspect ratios of 20:1 and higher. This is achieved by placing a ‘lower sputter rate’ material on top of a ‘higher sputter rate’ material. We model the FIB as a Gaussian beam with an angular dependent sputter rate. With our model we predict a high sputter rate ratio (high/low) can achieve vias with aspect ratios near 20:1. Experimental results support this prediction. By placing a thin layer of pyrolyzed carbon on top of silicon, we fabricated UHAR vias with diameters of 75 nm.Copyright © 2010 by ASME |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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