Generation-Recombination Noise ofp-InSb
| Autor: | Wataru Miyao, Koichi Kanzaki |
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| Rok vydání: | 1976 |
| Předmět: | |
| Zdroj: | Japanese Journal of Applied Physics. 15:1113-1116 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.15.1113 |
| Popis: | The noise power spectrum of high purity p-InSb has been measured at 77K. Generation-recombination (g-r) noise was found dominant in the 1–10 kHz frequency range. The measured values of g-r noise power are one or two orders of magnitude smaller than the values calculated by the simple noise theory of the extrinsic semiconductor due to partial deep level ionization. The g-r noise theory, taking the complete shallow acceptor levels ionization and partial deep level ionization into account, closely predicts the actually obtained experimental values. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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