The effect of dislocations on the optical absorption of heteroepitaxial InP and GaAs on Si
| Autor: | Andreas Schlachetzki, H. Iber, Erwin Peiner |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Materials science
Stripping (chemistry) Absorption spectroscopy Physics::Instrumentation and Detectors business.industry Physics::Optics General Physics and Astronomy Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science Wavelength Optics Ellipsometry Optoelectronics Dislocation business Absorption (electromagnetic radiation) Layer (electronics) |
| Zdroj: | Journal of Applied Physics. 79:9273-9277 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | The optical absorption of heteroepitaxial InP and GaAs layers grown on exactly [001]‐oriented Si substrates was investigated by spectroscopic ellipsometry combined with anodic stripping. In the wavelength range above the band‐gap‐equivalent wavelength considerable absorption was found which depends on the dislocation density in the layer. A theoretical model based on the electric microfield of charged dislocations was developed which agrees closely with the experimental results. After calibration differential spectroscopic ellipsometry was used to determine the dislocation‐density profile in the InP and GaAs layers. Thus, the dislocation density could be determined in the region of a few tens of nm to the heterointerface of InP on Si where the identification and counting of dislocations is impossible by other methods. |
| Databáze: | OpenAIRE |
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