Wide-locking range divide-by-4 injection-locked frequency divider using injection MOSFET DC-biased above threshold region
Autor: | Sheng-Lyang Jang, Yu-Tai Chang, Ching-Wen Hsue, Miin-Horng Juang |
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Rok vydání: | 2015 |
Předmět: |
Physics
business.industry Applied Mathematics Frequency multiplier 020208 electrical & electronic engineering Transistor Electrical engineering 020206 networking & telecommunications 02 engineering and technology Die (integrated circuit) Computer Science Applications Electronic Optical and Magnetic Materials law.invention Threshold voltage Power (physics) Frequency divider law MOSFET 0202 electrical engineering electronic engineering information engineering Range (statistics) Electrical and Electronic Engineering business |
Zdroj: | International Journal of Circuit Theory and Applications. 44:968-976 |
ISSN: | 0098-9886 |
DOI: | 10.1002/cta.2116 |
Popis: | A novel wide locking range divide-by-4 injection-locked frequency divider ILFD is proposed in the paper and was implemented in the TSMC 0.18µm 1P6M CMOS process. The divide-by-4 ILFD uses two injection transistors in series and DC-biased above threshold voltage and a frequency doubler to enhance the function of linear mixers. At the drain-source bias of 0.9V and at the incident power of 0 dBm, the locking range of the divide-by-4 is 2.6GHz; from the incident frequency 12.2to 14.8GHz, the percentage is 19.26%. The core power consumption is 10.35mW. The die area of ILFD is 1.026×0.943mm2. Copyright © 2015 John Wiley & Sons, Ltd. |
Databáze: | OpenAIRE |
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