Material analysis of high degree of variability in thin CMOS for SRAM current sense amplifier

Autor:	S. Raja Gopal, R. Selvakumar, M. Lakshmana Kumar
Rok vydání:	2020
Předmět:	business.industry Sense amplifier Computer science Electrical engineering Hardware_PERFORMANCEANDRELIABILITY Sense (electronics) PMOS logic CMOS Current sense amplifier Hardware_INTEGRATEDCIRCUITS Inverter Static random-access memory business NMOS logic
Zdroj:	Materials Today: Proceedings. 21:299-306
ISSN:	2214-7853
DOI:	10.1016/j.matpr.2019.05.444
Popis:	In modern computer memory role is to sense the low power signals, this paper optimally finds the best solutions to improve the performance of the Sense Amplifier for CMOS SRAM. The circuit is designed and simulated in the Advanced Design System. The simulation result shows that the required output voltage 1.2 V is available after addition of an Inverter at the output & having identical PMOS & NMOS in the circuit. It is observed that the performance of the sense amplifier has been improved drastically. To have better results now our future work will concern the 22-nm technology.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::ef280a9361c655e37655086128e0e58d https://doi.org/10.1016/j.matpr.2019.05.444 Zobrazit plný text záznamu Full Text from ScienceDirect